This N-channel power MOSFET is rated for 60 V drain-source voltage and 125 A continuous drain current at 25°C case temperature. It provides low on-resistance of 5.5 mΩ typical at 10 V gate drive and supports up to 188 W power dissipation at 25°C case temperature. The device is housed in a TO-220 package and is specified for junction temperatures up to 175°C. The datasheet also lists 441 mJ single-pulse avalanche energy and RoHS-compliant lead-free availability.
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Ruichips RU60120R technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Gate-Source Voltage | ±25V |
| Continuous Drain Current (Tc=25°C) | 125A |
| Continuous Drain Current (Tc=100°C) | 92A |
| Pulse Drain Current | 480A |
| Drain-Source On-Resistance | 5.5 typmΩ |
| Drain-Source On-Resistance | 6 maxmΩ |
| Maximum Power Dissipation (Tc=25°C) | 188W |
| Maximum Junction Temperature | 175°C |
| Thermal Resistance Junction-to-Case | 0.8°C/W |
| Gate Threshold Voltage | 2 to 4V |
| Input Capacitance | 3870pF |
| Reverse Recovery Time | 48ns |
| Total Gate Charge | 105nC |
| Single-Pulse Avalanche Energy | 441mJ |
| RoHS | Compliant |
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