This device is an N-channel advanced power MOSFET rated for 60 V drain-source voltage and 120 A continuous current at 25°C. It is offered in a TO220S package and specifies a typical on-resistance of 6 mΩ at 10 V gate drive. The part includes an insulated slug rated to at least 1500 VAC, is fully avalanche rated, and supports operation up to 175°C junction temperature. It is intended for switching application systems and inverter systems.
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Ruichips RU6099R3 technical specifications.
| Channel Type | N-Channel |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 120A |
| Continuous Drain Current at 100°C | 90A |
| Pulsed Drain Current | 380A |
| Drain-Source On-Resistance | 6 typ, 7 maxmΩ |
| Gate-Source Voltage | ±25V |
| Gate Threshold Voltage | 2 to 4V |
| Gate Leakage Current | ±100nA |
| Input Capacitance | 3000pF |
| Output Capacitance | 430pF |
| Reverse Transfer Capacitance | 240pF |
| Total Gate Charge | 72nC |
| Reverse Recovery Time | 50ns |
| Reverse Recovery Charge | 95nC |
| Diode Forward Voltage | 1.2V |
| Thermal Resistance Junction-to-Case | 1°C/W |
| Avalanche Energy | 625mJ |
| Operating Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| RoHS | Compliant |
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