N-channel advanced power MOSFET supports 75 V drain-source voltage and 210 A continuous drain current at 25 °C case temperature. The device has 4.5 mΩ typical on-resistance at 10 V gate drive and 75 A drain current, with a ±25 V gate-source rating. TO220S tube packaging is specified, with an insulated slug rated at 1500 VAC or higher. The MOSFET is avalanche tested, rated for 175 °C junction operation, and is available as a lead-free RoHS-compliant green device.
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| Transistor Type | N-channel MOSFET |
| Drain-Source Voltage | 75V |
| Continuous Drain Current at Tc=25°C | 210A |
| Continuous Drain Current at Tc=100°C | 148A |
| Pulsed Drain Current | 840A |
| Gate-Source Voltage | ±25V |
| Drain-Source On Resistance Typ at Vgs=10V Id=75A | 3.5mΩ |
| Drain-Source On Resistance Max at Vgs=10V Id=75A | 4.5mΩ |
| Gate Threshold Voltage | 2 to 4V |
| Maximum Junction Temperature | 175°C |
| Storage Temperature Range | -55 to 175°C |
| Maximum Power Dissipation at Tc=25°C | 375W |
| Thermal Resistance Junction-to-Case | 0.4°C/W |
| Single-Pulse Avalanche Energy | 900mJ |
| Input Capacitance | 7400pF |
| Output Capacitance | 1050pF |
| Reverse Transfer Capacitance | 480pF |
| Total Gate Charge | 92nC |
| Package | TO220S |
| RoHS | Compliant |
| Lead Free | Available |
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