N-channel logic-level enhancement-mode MOSFET provides a 100 V drain-source rating and 68 A continuous drain current at 25 °C case temperature. The device has a maximum drain-source on-resistance of 6.9 mΩ at 10 V gate drive and 34 A drain current. It uses a surface-mount DFN 5x6-8L package with an operating junction and storage temperature range from -55 °C to 150 °C. The MOSFET is identified as a green product and includes a rugged cell design for low on-resistance switching applications.
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| Transistor Type | N-channel logic-level enhancement-mode MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25°C Case | 68A |
| Continuous Drain Current at 70°C Case | 54.4A |
| Pulsed Drain Current | 138A |
| Gate-Source Voltage | ±20V |
| Maximum Power Dissipation at 25°C Case | 83W |
| Maximum Power Dissipation at 70°C Case | 53W |
| Drain-Source On-State Resistance | 6.9 max at VGS=10V, ID=34AmΩ |
| Gate Threshold Voltage | 2 min, 2.7 typ, 4 maxV |
| Zero Gate Voltage Drain Current | 1 max at VDS=80V, VGS=0VµA |
| Gate-Body Leakage Current | ±100 maxnA |
| Input Capacitance | 3741 typpF |
| Output Capacitance | 500 typpF |
| Reverse Transfer Capacitance | 336 typpF |
| Total Gate Charge | 67 typ at VDS=50V, ID=25A, VGS=10VnC |
| Diode Forward Voltage | 0.76 typ, 1.3 max at IS=17AV |
| Operating Junction and Storage Temperature | -55 to 150°C |
| Thermal Resistance Junction-to-Case | 1.5°C/W |
| Single Pulse Avalanche Energy | 100mJ |
| Green Product | Yes |
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