This device is an N-channel logic-level enhancement-mode MOSFET rated for 60 V drain-source voltage and 50 A continuous drain current at 25 °C case temperature. It offers a maximum drain-source on-resistance of 9.0 mΩ at 10 V gate drive and 13.2 mΩ at 4.5 V gate drive, with typical total gate charge of 55 nC at 10 V. The transistor is specified for pulsed drain current up to 146 A and single-pulse avalanche energy of 289 mJ. Operating junction and storage temperature range is -55 °C to 150 °C. This STU version is supplied in the TO-252AA (D-PAK) package.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Samhop Microelectronics STU668S datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Samhop Microelectronics STU668S technical specifications.
| Channel Type | N-Channel Logic Level Enhancement Mode |
| Drain-Source Voltage | 60V |
| Continuous Drain Current (TC=25°C) | 50A |
| Continuous Drain Current (TC=70°C) | 40A |
| Pulsed Drain Current | 146A |
| Gate-Source Voltage | ±20V |
| Power Dissipation (TC=25°C) | 42W |
| Drain-Source On-Resistance Max @ VGS=10V | 9.0mΩ |
| Drain-Source On-Resistance Max @ VGS=4.5V | 13.2mΩ |
| Gate Threshold Voltage | 1 to 3V |
| Total Gate Charge Typ @ VGS=10V | 55nC |
| Input Capacitance | 4760pF |
| Output Capacitance | 243pF |
| Reverse Transfer Capacitance | 209pF |
| Single Pulse Avalanche Energy | 289mJ |
| Operating Junction and Storage Temperature Range | -55 to 150°C |
| Environmental | Green |
Download the complete datasheet for Samhop Microelectronics STU668S to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
