The K4S51163PF-YF1L000 is a 512Mb synchronous DRAM from Samsung with a 15-bit address bus width. It is packaged in a flip-chip ball grid array (FBGA) and is designed for surface mount applications. The device operates at a maximum frequency of 111MHz and has a maximum operating temperature of 70°C. It requires an operating supply voltage of 1.8V and a supply current of 120mA. The device is organized as 32M x 16 bits and is suitable for use in a variety of applications requiring high-density memory.
Samsung K4S51163PF-YF1L000 technical specifications.
| Address Bus Width | 15b |
| Package/Case | FBGA |
| Density | 512Mb |
| Max Frequency | 111MHz |
| Max Operating Temperature | 70°C |
| Min Operating Temperature | -25°C |
| Max Supply Voltage | 1.95V |
| Min Supply Voltage | 1.7V |
| Mount | Surface Mount |
| Operating Supply Voltage | 1.8V |
| Organization | 32MX16 |
| Supply Current | 120mA |
| RoHS | Compliant |
No datasheet is available for this part.
