1Gbyte DDR SDRAM 200USODIMM module, featuring 16 x 512M bit chips organized as 128Mx64. This unbuffered small outline dual in line memory module operates at a maximum clock rate of 333 MHz with a 64-bit data bus width and dual ranks. The 200-pin USODIMM package, with a 0.6mm pin pitch, is designed for socket mounting and has a package length of 67.6mm and a maximum width of 3.8mm. It supports a typical operating supply voltage of 2.5V, with a CAS latency of 2.5, and operates within a temperature range of 0°C to 70°C.
PackageUSODIMM
MountingSocket
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Technical Specifications
Samsung M470L2923DV0-CB300 technical specifications.
General
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
DIM
Package/Case
USODIMM
Package Description
Unbuffered Small Outline Dual In Line Memory Module
Lead Shape
No Lead
Pin Count
200
PCB
200
Package Length (mm)
67.6
Package Width (mm)
3.8(Max)
Package Height (mm)
31.75
Pin Pitch (mm)
0.6
Mounting
Socket
Main Category
DRAM Module
Total Density
1Gbyte
Module Type
200USODIMM
Maximum Access Time
0.7ns
Maximum Clock Rate
333MHz
Chip Density
512Mbit
Subcategory
DDR SDRAM
Data Bus Width
64bit
Number of Chip per Module
16
Organization
128Mx64
Chip Package Type
66TSOP-II
Typical Operating Supply Voltage
2.5V
Maximum Operating Current
1560mA
Min Operating Supply Voltage
2.3V
Max Operating Supply Voltage
2.7V
Min Operating Temperature
0°C
Max Operating Temperature
70°C
Chip Configuration
64Mx8
ECC Support
No
Number of Ranks
Dual
CAS Latency
2.5
Compliance
Cage Code
1542F
EU RoHS
Yes
HTS Code
8473301140
Schedule B
8473300002
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
RoHS Versions
2002/95/EC
Datasheet
Samsung M470L2923DV0-CB300 Datasheet
Download the complete datasheet for Samsung M470L2923DV0-CB300 to view detailed technical specifications.
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