RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T-47, 4 PIN
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-220, 3 PIN
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, MTO-3P, 3 PIN
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-220, 3 PIN
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
Power Bipolar Transistor, 5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN
Power Bipolar Transistor, 7A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 45V; IC (A): 1A; HFE Min: 60; HFE Max: 320; VCE (V): 5V; IC (mA): 500mA; VCE(SAT) (V): 0.6V; IC (mA)1: 500mA; IB (mA): 50mA; FT Min (MHz): 180 MHz; PTM Max (W): 0.5W; Package: SOT-89; package_code: SOT-89; mfr_package_code: SOT-89