
FUJI ELECTRIC 7MBR25SA-120-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 25 A, 2.1 V, 180 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 25A I(C), 1400V V(BR)CES, N-Channel, MODULE-24
Silicon Controlled Rectifier, 39.25A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-26
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24

FUJI ELECTRIC 7MBR30SA-060-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 30 A, 1.8 V, 120 W, 600 V, Module