Silicon Controlled Rectifier, 39.25A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element, MODULE-26

FUJI ELECTRIC 7MBR25SA-120-50 IGBT Array & Module Transistor, 7 Pack, N Channel, 25 A, 2.1 V, 180 W, 1.2 kV, Module
Insulated Gate Bipolar Transistor, 25A I(C), 1400V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-35
Insulated Gate Bipolar Transistor, 10A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, MODULE-24
Insulated Gate Bipolar Transistor, 50A I(C), 1400V V(BR)CES, N-Channel, MODULE-35
Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel, MODULE-24