ALD114835PCL - Electronic Components Search

MOSFET Quad EPAD(R) N-Ch

Volume Production

Package/Case: DIP

Continuous Drain Current (ID): 3mA

Drain to Source Breakdown Voltage: 10V

Drain to Source Resistance: 540R

MOSFET Quad EPAD(R) N-Ch

Volume Production

Package/Case: SOIC

Continuous Drain Current (ID): 3mA

Drain to Source Breakdown Voltage: 10V

Drain to Source Resistance: 540R

Transistor

IN-LINE, R-PDIP-T16

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Max Operating Temperature: 70

Number of Terminals: 16

Min Operating Temperature: 0

Terminal Position: DUAL

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