Rectifier Diode, 1 Phase, 1 Element, 15A, 1000V V(RRM), Silicon, TO-220AC, TO-220, 2 PIN
Insulated Gate Bipolar Transistor, 56A I(C), 600V V(BR)CES, N-Channel, TO-220AB, TO-220, 3 PIN

Power Field-Effect Transistor, 7A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Power Field-Effect Transistor, 4.4A I(D), 1000V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
Insulated Gate Bipolar Transistor, 43A I(C), 900V V(BR)CES, N-Channel, TO-247AD, TO-247, 3 PIN