Search Results for &quot; AT28HC256-70SC &quot;

IC EEPROM 256KBIT 90NS 28FLATPK

FP-28

Active

Access Time: 70ns

Access Time-Max: 90ns

Contact Plating: Tin, Lead

Density: 256Kb

AT28HC256-90JU-600

IC EEPROM 256KBIT 90NS 32PLCC

LCC-32

Active

Max Operating Temperature: 85

Number of Terminals: 32

Min Operating Temperature: -40

Terminal Position: QUAD

AT28HC256E-90LM/883

IC EEPROM 256KBIT 90NS 32CLCC

LCC-32

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC256E-12LM/883

IC EEPROM 256KBIT 120NS 32CLCC

LCC-32

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC256F-12UM/883

IC EEPROM 256KBIT 120NS 28CPGA

PGA-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256E-90DM/883

EEPROM 256K HI-ENDURANCE SDP - 90NS

End of Life

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: CDIP

Density: 256Kb

AT28HC64B-70SC

IC EEPROM 64KBIT 70NS 28SOIC

Obsolete

Access Time: 55ns

Access Time-Max: 70ns

Package/Case: SOIC

Density: 64Kb

AT28HC256E-12UM/883

EEPROM Parallel 256K-bit 32K x 8 5V 28-Pin CPGA

Not Recommended for New Design

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256E-90FM/883

EEPROM Parallel 256K-bit 32K x 8 5V 28-Pin CBFPAK

Volume Production

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: Ceramic

Contact Plating: Tin, Lead

AT28HC256F-12LM/883

IC EEPROM 256KBIT 120NS 32CLCC

LCC-32

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC256F-90FM/883

IC EEPROM 256KBIT 90NS 28FLATPK

FP-28

Active

Access Time: 70ns

Access Time-Max: 90ns

Contact Plating: Tin, Lead

Density: 256Kb

+14

AT28HC256F-90DM/883

EEPROM, 32KX8, 90ns, Parallel, CMOS, CDIP28

DIP-28

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: CDIP

Density: 256Kb

AT28HC256E-12FM/883

IC EEPROM 256KBIT 120NS 28FLATPK

FP-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: Ceramic

Contact Plating: Tin, Lead

AT28HC256F-12FM/883

IC EEPROM 256KBIT 120NS 28FLATPK

FP-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: Ceramic

Contact Plating: Tin, Lead

AT28HC256F-90UM/883

IC EEPROM 256KBIT 90NS 28CPGA

PGA-28

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256E-12DM/883

EEPROM 256K HI-ENDURANCE SDP - 120NS

End of Life

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: CDIP

Density: 256Kb

AT28HC256E-90UM/883

IC EEPROM 256KBIT 90NS 28CPGA

PGA-28

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256F-12DM/883

EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28

DIP-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: CDIP

Density: 256Kb

AT28HC256F-90LM/883

IC EEPROM 256KBIT 90NS 32CLCC

LCC-32

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC64B-70SU-T

IC EEPROM 64KBIT 70NS 5V 28SOIC INDUSTRIAL

SOIC-28

Active

Max Operating Temperature: 85

Number of Terminals: 28

Min Operating Temperature: -40

Terminal Position: DUAL

Search Results for "AT28HC256-70SC"

Filters

AT28HC256-90FM/883

IC EEPROM 256KBIT 90NS 28FLATPK

FP-28

Active

Access Time: 70ns

Access Time-Max: 90ns

Contact Plating: Tin, Lead

Density: 256Kb

AT28HC256-90JU-600

IC EEPROM 256KBIT 90NS 32PLCC

LCC-32

Active

Max Operating Temperature: 85

Number of Terminals: 32

Min Operating Temperature: -40

Terminal Position: QUAD

AT28HC256E-90LM/883

IC EEPROM 256KBIT 90NS 32CLCC

LCC-32

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC256E-12LM/883

IC EEPROM 256KBIT 120NS 32CLCC

LCC-32

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC256F-12UM/883

IC EEPROM 256KBIT 120NS 28CPGA

PGA-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256E-90DM/883

EEPROM 256K HI-ENDURANCE SDP - 90NS

End of Life

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: CDIP

Density: 256Kb

AT28HC64B-70SC

IC EEPROM 64KBIT 70NS 28SOIC

Obsolete

Access Time: 55ns

Access Time-Max: 70ns

Package/Case: SOIC

Density: 64Kb

AT28HC256E-12UM/883

EEPROM Parallel 256K-bit 32K x 8 5V 28-Pin CPGA

Not Recommended for New Design

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256E-90FM/883

EEPROM Parallel 256K-bit 32K x 8 5V 28-Pin CBFPAK

Volume Production

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: Ceramic

Contact Plating: Tin, Lead

AT28HC256F-12LM/883

IC EEPROM 256KBIT 120NS 32CLCC

LCC-32

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC256F-90FM/883

IC EEPROM 256KBIT 90NS 28FLATPK

FP-28

Active

Access Time: 70ns

Access Time-Max: 90ns

Contact Plating: Tin, Lead

Density: 256Kb

+14

AT28HC256F-90DM/883

EEPROM, 32KX8, 90ns, Parallel, CMOS, CDIP28

DIP-28

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: CDIP

Density: 256Kb

AT28HC256E-12FM/883

IC EEPROM 256KBIT 120NS 28FLATPK

FP-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: Ceramic

Contact Plating: Tin, Lead

AT28HC256F-12FM/883

IC EEPROM 256KBIT 120NS 28FLATPK

FP-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: Ceramic

Contact Plating: Tin, Lead

AT28HC256F-90UM/883

IC EEPROM 256KBIT 90NS 28CPGA

PGA-28

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256E-12DM/883

EEPROM 256K HI-ENDURANCE SDP - 120NS

End of Life

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: CDIP

Density: 256Kb

AT28HC256E-90UM/883

IC EEPROM 256KBIT 90NS 28CPGA

PGA-28

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: PGA

Contact Plating: Tin, Lead

AT28HC256F-12DM/883

EEPROM, 32KX8, 120ns, Parallel, CMOS, CDIP28

DIP-28

Active

Access Time: 120ns

Access Time-Max: 120ns

Package/Case: CDIP

Density: 256Kb

AT28HC256F-90LM/883

IC EEPROM 256KBIT 90NS 32CLCC

LCC-32

Active

Access Time: 90ns

Access Time-Max: 90ns

Package/Case: LCC

Contact Plating: Tin, Lead

AT28HC64B-70SU-T

IC EEPROM 64KBIT 70NS 5V 28SOIC INDUSTRIAL

SOIC-28

Active

Max Operating Temperature: 85

Number of Terminals: 28

Min Operating Temperature: -40

Terminal Position: DUAL