RF Power Field-Effect Transistor, 1-Element, C Band, Silicon, N-Channel, High Electron Mobility FET, 2 X 2 MM, 0.75 MM HEIGHT, LPCC-8
RF FET, 6GHz, 7V, 1A, 1.4dB NF, 14.8dB Gain, SMT
Cap Tant Solid 1uF 16V P CASE 20% (2 X 1.25 X 1.1mm) Inward L SMD 25 Ohm 125°C T/R
Cap Tant Solid 47uF 6.3V A CASE 20% (3.2 X 1.6 X 1.6mm) Inward L SMD 3216-18 3.5 Ohm 125°C T/R
XTAL OSC PROG XO CMOS 2.5V 50PPM
XTAL OSC PROG XO CMOS 2.5V 25PPM
XTAL OSC PROG XO CMOS 2.5V 20PPM
