RF Power Bipolar Transistor, 1-Element, Very High Frequency Band, Silicon, NPN, T-47, 4 PIN
Power Bipolar Transistor, 3A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN
Power Bipolar Transistor, 2A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-220, 3 PIN
General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 20V; IC (A): 0.015A; HFE Min: 40; HFE Max: 260; VCE (V): 6V; IC (mA): 1mA; FT Min (MHz): 450 MHz; PTM Max (W): 0.125W; Package: SOT-523; package_code: SOT-523; mfr_package_code: SOT-523
Power Bipolar Transistor, 8A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-3P, 3 PIN
Power Bipolar Transistor, 7A I(C), 800V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, FM100, 3 PIN
Power Bipolar Transistor, 5A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-220, 3 PIN
Power Bipolar Transistor, 12A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, ITO-220, 3 PIN