Silicon Controlled Rectifier, 23.55A I(T)RMS, 1600V V(DRM), 1600V V(RRM), 1 Element
Insulated Gate Bipolar Transistor, 1500A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-20
Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-20
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, MODULE-7