Insulated Gate Bipolar Transistor, 400A I(C), 3300V V(BR)CES, N-Channel, MODULE-5
Insulated Gate Bipolar Transistor, 1200A I(C), 3300V V(BR)CES, N-Channel, MODULE-9
Inductor RF Molded/Unshielded Wirewound 62uH 3% 2.5MHz 55Q-Factor Iron 180mA 3.15Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 56uH 3% 2.5MHz 45Q-Factor Ferrite 69mA 10Ohm DCR AXL T/R
Inductor RF Unshielded Wirewound 82uH 3% 2.5MHz 35Q-Factor Ferrite 0.088A 7.3Ohm DCR 3013 T/R
Inductor RF Molded/Unshielded Wirewound 82uH 3% 2.5MHz 50Q-Factor Ferrite 88mA 7.3Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 62uH 3% 2.5MHz 55Q-Factor Iron 180mA 3.15Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 56uH 3% 2.5MHz 45Q-Factor Ferrite 69mA 10Ohm DCR AXL T/R
Inductor RF Molded/Unshielded Wirewound 82uH 3% 2.5MHz 50Q-Factor Ferrite 88mA 7.3Ohm DCR AXL T/R