RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IU, 4 PIN
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 4 PIN
High Voltage - High Power GaAs FET
FET, P Channel, ID 15 A
L-Band High Power GaAs FET
FET, P Channel, ID 13 A
FET, P Channel, ID 16 A
Three Phase EMI Filter,
Three Phase EMI Filter, 520V,
