GaAs RF FET
FET, P Channel, ID 32 A
RF Power Field-Effect Transistor, 1-Element, L Band, Gallium Arsenide, N-Channel, Junction FET, CASE IU, 4 PIN
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, CASE IK, 2 PIN
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, CASE IQ, 4 PIN
FET, P Channel, ID 16 A
FET, P Channel, ID 1.8 A
High Voltage - High Power GaAs FET
FET, P Channel, ID 15 A
L-Band High Power GaAs FET
FET, P Channel, ID 72 A
FET, P Channel, ID 48 A
FET, P Channel, ID 13 A
RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, MK, 2 PIN
Trans FET 32V
