Wide Band Low Power Amplifier, 17500MHz Min, 32000MHz Max, 1.65 X 1.44 MM, 0.08 MM HEIGHT, DIE
Wide Band Medium Power Amplifier, 17500MHz Min, 20000MHz Max, 0.00347 X 0.00263 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Variable Capacitance Diode, 2.3pF C(T), 30V, Silicon
Zener Diode, 8.7V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 16V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 7.5V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Medium Power Amplifier, 21000MHz Min, 27000MHz Max, 3.45 X 2.2 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Low Power Amplifier, 57000MHz Min, 64000MHz Max, 2.19 X 0.92 MM, 0.07 MM HEIGHT, DIE
Wide Band Low Power Amplifier, 57000MHz Min, 64000MHz Max, CHIP
Wide Band Medium Power Amplifier, 21000MHz Min, 27000MHz Max, 4.025 X 2.235 MM, 0.06 MM HEIGHT, DIE
Wide Band Low Power Amplifier, 24000MHz Min, 32000MHz Max, 1.56 X 1.16 MM, 0.11 MM HEIGHT, HERMETIC SEALED, DIE
Zener Diode,
Variable Capacitance Diode, 10pF C(T), 30V, Silicon, Abrupt,
Zener Diode, 9.1V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Zener Diode, 33V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
Wide Band Medium Power Amplifier, 24000MHz Min, 27000MHz Max, 1.41 X 2.81 MM, 0.07 MM HEIGHT, HERMETIC SEALED, DIE
Narrow Band High Power Amplifier, 29500MHz Min, 30000MHz Max, 4.23 X 2.62 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
Power Field-Effect Transistor, 33A I(D), 200V, 0.04ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, ISOPLUS, I4PAK-5
Power Field-Effect Transistor, 65A I(D), 150V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAC-5
Zener Diode, 20V V(Z), 5%, 0.33W, Silicon, Unidirectional, SOT-23, 3 PIN
