Wide Band Low Power Amplifier, 2.44 X 1.47 MM, 0.06 MM HEIGHT, HERMETIC SEALED, DIE
Wide Band Medium Power Amplifier, 5800MHz Min, 7200MHz Max, 4.17 X 3.27 MM, 0.07 MM HEIGHT, DIE
Variable Capacitance Diode, 22.5pF C(T), 30V, Silicon, SOT-23, 3 PIN
Variable Capacitance Diode, 33pF C(T), 30V, Silicon, Abrupt,
Variable Capacitance Diode, 6.8pF C(T), 30V, Silicon, Abrupt,
Ethernet Transceiver, 1-Trnsvr, GAAS, PQFP64,
Prescaler, 1103 Series, 1-Func, CQFP10, HERMETIC SEALED, SMT-10
Small Signal Bipolar Transistor, 0.5A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
Small Signal Bipolar Transistor, 0.5A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.2A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon,
Rectifier Diode, 1 Element, 0.075A, Silicon,
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.8A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.1A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon
Small Signal Bipolar Transistor, 0.9A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
Small Signal Bipolar Transistor, 0.2A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon, SOT-23, 3 PIN
