Trans IGBT Module N-CH 600V 22A 81000mW 20-Pin EASY1B-1 Tray
Trans IGBT Module N-CH 1200V 100A 515000mW 35-Pin ECONO3-3 Tray
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
EasyPIM™ module with fast Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode and NTC/pre-applied Thermal Interface Material
Insulated Gate Bipolar Transistor, 650V V(BR)CES, N-Channel, MODULE-43
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-43
Insulated Gate Bipolar Transistor, 28A I(C), 1200V V(BR)CES, N-Channel, MODULE-20
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-21
Insulated Gate Bipolar Transistor, 22A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel, MODULE-22
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Insulated Gate Bipolar Transistor, 1200V V(BR)CES, N-Channel, MODULE-35
