Insulated Gate Bipolar Transistor, 75A I(C), 1200V V(BR)CES, N-Channel, ECONO, SIXPACK-17
VISHAY VS-GB50YF120N IGBT Array & Module Transistor, NPN, 66 A, 4.15 V, 330 W, 1.2 kV, EconoPACK
Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 50A TO-247-2; Mounting Style: Through Hole; Package / Case: TO-247-2; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 50 A; Forward Voltagen(VF): 1.5 V @ 50 A; Reverse Currentn(IR): 4 uA @ 1200 V; Total Capacitive Charge (QC): 199 nC; Capacitancen(C): 3263 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 300 A; Power Dissipationn(PD): 1228 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C

Fuse Miniature Very Fast Acting 6A 250V Axial 6.35 X 31.75mm Ceramic CE/CSA/UL

Fuse Miniature Very Fast Acting 9A 250V Axial 6.35 X 31.75mm Ceramic CE/CSA/UL

Fuse Miniature Very Fast Acting 7A 250V Holder Cartridge 6.35 X 31.75mm Ceramic CE/CSA/UL