Inductor Power Wirewound 100uH 10% 1KHz 0.84A 0.45Ohm DCR T/R
Inductor Power Wirewound 1800uH 10% 1KHz 0.2A 7Ohm DCR T/R
Inductor Power Wirewound 330uH 10% 1KHz 0.46A 1.35Ohm DCR T/R
Inductor Power Wirewound 18uH 10% 1KHz 2A 0.1Ohm DCR T/R
Inductor Power Wirewound 1000uH 10% 1KHz 0.27A 4.3Ohm DCR T/R
Inductor Power Wirewound 220uH 10% 1KHz 0.57A 0.95Ohm DCR T/R
RF Choke Molded Wirewound 6.8uH 10% 7.9MHz 55Q-Factor Powdered Iron 0.122A 3.2Ohm DCR AXL
RF Choke Molded Wirewound 0.68uH 10% 25MHz 40Q-Factor Powdered Iron 0.485A 0.2Ohm DCR AXL
DRIVE, 2.5" SATAII 640GB, SAMSUNG
ROHDE & SCHWARZ HM6050-2D STABILISER, LINE Z, GERMAN VERSION
Ind Chip Shielded 2.2uH 20% 100KHz 1.2A T/R
Ind Chip Shielded 10uH 20% 100KHz 1A T/R
Ind Chip Shielded 12uH 20% 10KHz 560mA T/R
Ind Chip Shielded 3.3uH 20% 10KHz 1.57A T/R
Ind Unshielded 47uH 20% 100KHz 510mA T/R
Ind Unshielded 22uH 20% 100KHz 620mA T/R
Cache SRAM, 64KX1, 55ns, CMOS, PDIP22, 0.300 INCH, PLASTIC, DIP-22
Ind Chip Shielded 27uH 20% 100KHz 850mA T/R
Ind Chip Wirewound 100nH 20% 28A T/R
Ind Shielded 4.7uH 20% 100KHz 1.35A T/R
