512Kx16 SRAM, 55ns, 3V, TFBGA-48
Standard SRAM, 256KX16, 55ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
STANDARD SRAM, PDSO44, 0.400 INCH, PLASTIC, TSOP2-44
Ind High Current 390uH 10% 100KHz 430mA T/R
Ind High Current 560uH 10% 100KHz 360mA T/R
Ind High Current 680uH 10% 100KHz 320mA T/R
Ind High Current 470uH 10% 100KHz 390mA T/R
Standard SRAM, 2KX8, 200ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
Standard SRAM, 2KX8, 200ns, CMOS, PDIP24, 0.300 INCH, PLASTIC, DIP-24
RF Choke Molded Wirewound 6.8uH 10% 7.9MHz 55Q-Factor Powdered Iron 0.122A 3.2Ohm DCR AXL
RF Choke Molded Wirewound 0.68uH 10% 25MHz 40Q-Factor Powdered Iron 0.485A 0.2Ohm DCR AXL
16Kbit SRAM 2Kx8 Async 200ns 5V 24-Pin PDIP
Standard SRAM, 2KX8, 150ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
Standard SRAM, 1MX4, 20ns, CMOS, PDSO32, 0.400 INCH, PLASTIC, SOJ-32
Standard SRAM, 2KX8, 120ns, CMOS, PDIP24, 0.600 INCH, PLASTIC, DIP-24
DRIVE, 2.5" SATAII 640GB, SAMSUNG
Ind Chip Wirewound 100nH 20% 28A T/R
Ind Unshielded 4.7uH 20% 100KHz 1.32A T/R
