Search Results for &quot; IRFY120 &quot;

Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

FLANGE MOUNT, S-XSFM-P3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

Number of Elements: 1

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 77MR

Gate to Source Voltage (Vgs): 20V

18A, 100V, 0.092ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

FLANGE MOUNT, S-MSFM-P3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

Number of Elements: 1

Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

14.4A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN

FLANGE MOUNT, S-MSFM-P3

Not Recommended

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AB

Pin Count: 3

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257

Volume Production

Package/Case: TO-257AA

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 100V

+11

IRFY140M

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY110C

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

HERMETIC SEALED, METAL, TO-220M, 3 PIN

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AB

Number of Elements: 1

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

HERMETIC SEALED, TO-257AA, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRFY140CM

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 770mR

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

FLANGE MOUNT, S-XSFM-P3

Transferred

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Lead Free: Lead Free

Max Operating Temperature: 150°C

IRFY140CSCX

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY130CMSCV

Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA TXV Level Screening

Volume Production

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY130CMSCX

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

FLANGE MOUNT, R-XSFM-P3

Transferred

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY140CMSCV

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY11N50CMA

Power Field-Effect Transistor, 10A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

TO-257AA

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRFY140CMSCX

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY11N50CMASCX

Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 10A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY420

Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

FLANGE MOUNT, S-MSFM-P3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AB

Number of Elements: 1

Search Results for "IRFY120"

Filters

IRFY130

Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

Power Field-Effect Transistor, 16A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

FLANGE MOUNT, S-XSFM-P3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

Number of Elements: 1

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 77MR

Gate to Source Voltage (Vgs): 20V

18A, 100V, 0.092ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

FLANGE MOUNT, S-MSFM-P3

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

Number of Elements: 1

Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

14.4A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB, TO-220MC, 3 PIN

FLANGE MOUNT, S-MSFM-P3

Not Recommended

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AB

Pin Count: 3

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257

Volume Production

Package/Case: TO-257AA

Continuous Drain Current (ID): 16A

Current Rating: 16A

Drain to Source Breakdown Voltage: 100V

+11

IRFY140M

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY110C

Power Field-Effect Transistor, 3.5A I(D), 100V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN

HERMETIC SEALED, METAL, TO-220M, 3 PIN

Active

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AB

Number of Elements: 1

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

HERMETIC SEALED, TO-257AA, 3 PIN

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRFY140CM

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Drain to Source Voltage (Vdss): 100V

Drain-source On Resistance-Max: 770mR

Gate to Source Voltage (Vgs): 20V

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA, HERMETIC SEALED, TO-257AA, 3 PIN

FLANGE MOUNT, S-XSFM-P3

Transferred

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Lead Free: Lead Free

Max Operating Temperature: 150°C

IRFY140CSCX

Trans MOSFET N-CH 100V 16A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY130CMSCV

Trans MOSFET N-CH 100V 14.4A 3-Pin(3+Tab) TO-257AA TXV Level Screening

Volume Production

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY130CMSCX

Power Field-Effect Transistor, 14.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

FLANGE MOUNT, R-XSFM-P3

Transferred

Continuous Drain Current (ID): 14.4A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY140CMSCV

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY11N50CMA

Power Field-Effect Transistor, 10A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AA,

TO-257AA

Active

Max Operating Temperature: 150

Number of Terminals: 3

Terminal Position: SINGLE

JEDEC Package Code: TO-257AA

IRFY140CMSCX

Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line

Volume Production

Continuous Drain Current (ID): 16A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY11N50CMASCX

Trans MOSFET N-CH 500V 10A 3-Pin(3+Tab) TO-257AA

Volume Production

Continuous Drain Current (ID): 10A

Gate to Source Voltage (Vgs): 20V

Max Operating Temperature: 150°C

Min Operating Temperature: -55°C

IRFY420

Power Field-Effect Transistor, 25A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-257AB, HERMETIC SEALED, METAL, TO-220M, 3 PIN