Inductor RF Wirewound 0.5uH 5% 7.9MHz Ferrite 0.41A 0.45Ohm DCR 0603 T/R
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
MOUNTING BRACKET, STEEL, APO SERIES ENCLOSURES; For Use With:APO Series Enclosures; Enclosure Material:Stainless Steel; External Height - Imperial:4.13; External Height - Metric:104.9mm; External Width - Imperial:0.79 ;RoHS Compliant: Yes
Inductor RF Chip Unshielded Wirewound 0.5uH 5% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Inductor RF Chip Unshielded Wirewound 0.5uH 2% 50MHz 20Q-Factor Ceramic 0.2A 3.2Ohm DCR 0805 T/R
Rectifier Diode, 1 Phase, 1 Element, 100A, 600V V(RRM), Silicon,
Rectifier Diode, 1 Phase, 1 Element, 125A, 600V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.4KV 150A DO205
Rectifier Diode, 1 Phase, 1 Element, 100A, 400V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 100A, 1000V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 100A, 1200V V(RRM), Silicon, DO-8,
Rectifier Diode, 1 Phase, 1 Element, 175A, 1200V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.2KV 150A DO205
Splitter, 0MHz Min, 15000MHz Max, ROHS COMPLIANT PACKAGE-3
Inductor Power Shielded Wirewound 0.5uH 20% 100KHz Iron 36A 0.0015Ohm DCR T/R
ABL Series 4 MHz ±50 ppm 20 pF -40 to +85 °C Microprocessor Crystal
Rectifier Diode, 1 Phase, 1 Element, 175A, 600V V(RRM), Silicon, DO-8,
DIODE GEN PURP 1.6KV 125A DO205
