Search Results for "MG12KB"

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, SMD, 3 PIN

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, LEADLESS PACKAGE-3

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, GF-17, 2 PIN

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, SMD, 3 PIN

Surface probe magnetic K -50. . .+400 °C, MG-22K-GW1-ANP, Anritsu Meter

DC-DC Regulated Power Supply Module,

Wide Band Medium Power Amplifier, 18000MHz Min, 19000MHz Max, GAAS, DIE-15

Wide Band Medium Power Amplifier, 18000MHz Min, 19000MHz Max, GAAS, DIE-12

PROG TERM MONO 3.1 RS232C 5VDC

UNIVERSAL SERIAL BUS CONTROLLER

DC-DC Regulated Power Supply Module, 2 Output, 5W, Hybrid, MODULE-20

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, GF-7, 2 PIN

RF Power Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-10, 4 PIN

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4

10A, 600V, N-CHANNEL IGBT, TO-220AB

Single Color LED, White, Colorless Clear, ROHS COMPLIANT, PLASTIC, SMT, 6 PIN

Narrow Band Medium Power Amplifier, 1890MHz Min, 1920MHz Max, GAAS,