RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, GD-16, 4 PIN
Rectifier Diode, 1 Phase, 1 Element, 12A, 200V V(RRM), Silicon, TO-220AC, TO-220AC, 2 PIN
TRANSFORMER, POWER, 24V, 40VA, PANEL; Turns Ratio:-; Input Current:-; Frequency Min:-; Frequency Max:-; Transformer Mounting:Panel; Product Range:-
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, GF-2, 2 PIN