Search Results for "MGF0913A"

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, LEADLESS, CERAMIC PACKAGE-4

Narrow Band Medium Power Amplifier, 1890MHz Min, 1920MHz Max, GAAS,

Wide Band Low Power Amplifier, 37000MHz Min, 43000MHz Max, DIE-15

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, P-Channel, High Electron Mobility FET, GD-31, 4 PIN

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET

Wide Band Low Power Amplifier, 21000MHz Min, 24000MHz Max, GAAS,

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Metal-oxide Semiconductor FET, GF-17, 2 PIN

RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, GF-17, 2 PIN

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, LEADLESS, CERAMIC PACKAGE-4

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-9, 4 PIN

RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, P-Channel, Metal Semiconductor FET,

Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, GAAS,

Wide Band Medium Power Amplifier, 24500MHz Min, 26500MHz Max, GAAS, DIE-14

Wide Band Medium Power Amplifier, 27500MHz Min, 30000MHz Max, DIE-14