RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GD-16, 4 PIN
Narrow Band Medium Power Amplifier, 1850MHz Min, 1910MHz Max, GAAS,
SOFTWARE/SUPPORT OSEK MGT51/5200
Wide Band Medium Power Amplifier, 27500MHz Min, 30000MHz Max, GAAS, DIE-15
Wide Band Medium Power Amplifier, 21200MHz Min, 23600MHz Max, GAAS, DIE-14
COMBO WIRELESS MODULE
RF Small Signal Field-Effect Transistor, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
Wide Band Low Power Amplifier, 37000MHz Min, 40000MHz Max, GAAS,
Wide Band Low Power Amplifier, 27000MHz Min, 30000MHz Max, GAAS,
Inductor Power Wirewound 15uH 20% 100KHz 1.33A 0.13Ohm DCR T/R
Inductor Power Wirewound 56uH 10% 100KHz 0.94A 0.24Ohm DCR T/R
Inductor Power Wirewound 47uH 20% 100KHz 0.72A 0.47Ohm DCR T/R
Inductor Power Wirewound 180uH 20% 100KHz 0.23A 2.77Ohm DCR T/R
Inductor Power Wirewound 120uH 20% 100KHz 0.28A 1.9Ohm DCR T/R
Inductor Power Wirewound 68uH 10% 100KHz 0.85A 0.28Ohm DCR T/R
Inductor Power Wirewound 180uH 10% 100KHz 0.56A 0.62Ohm DCR T/R
Inductor Power Wirewound 12uH 20% 100KHz 1A 0.2Ohm DCR T/R
Inductor Power Wirewound 10uH 20% 100KHz 2.38A 0.05Ohm DCR T/R
Inductor Power Drum Core 68uH 20% 100KHz 0.69A 0.38Ohm DCR T/R
