Search Results for "MGS302412-R"

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, SMD, 3 PIN

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, PLASTIC, LEADLESS PACKAGE-3

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, GF-21, 2 PIN

Surface probe magnetic K -50. . .+400 °C, MG-22K-GW1-ANP, Anritsu Meter

PROG TERM MONO 3.1 RS232C 5VDC

Wide Band Medium Power Amplifier, 18000MHz Min, 19000MHz Max, GAAS, DIE-15

Wide Band Medium Power Amplifier, 18000MHz Min, 19000MHz Max, GAAS, DIE-12

Inductor Power Wirewound 270uH 20% 100KHz 0.32A 2.31Ohm DCR T/R

Inductor Power Wirewound 330uH 10% 100KHz 0.4A 1.26Ohm DCR T/R

Inductor Power Wirewound 560uH 20% 100KHz 0.18A 5.43Ohm DCR T/R

Inductor Power Wirewound 330uH 10% 100KHz 0.52A 1.15Ohm DCR T/R

Inductor Power Wirewound 180uH 10% 100KHz 0.72A 0.63Ohm DCR T/R

Inductor Power Wirewound 4.7uH 20% 100KHz 2.2A 0.054Ohm DCR T/R

Inductor Power Wirewound 680uH 20% 100KHz 0.2A 1.2Ohm DCR T/R

Inductor Power Wirewound 56uH 20% 100KHz 0.46A 0.78Ohm DCR T/R

Inductor Power Wirewound 68uH 10% 100KHz 1.11A 0.22Ohm DCR T/R

Inductor Power Wirewound 100uH 10% 100KHz 0.74A 0.34Ohm DCR T/R

Inductor Power Wirewound 270uH 20% 100KHz 0.19A 4.38Ohm DCR T/R

Inductor Power Wirewound 27uH 20% 100KHz 1.44A 0.1Ohm DCR T/R

Inductor Power Wirewound 47uH 20% 100KHz 1.1A 0.17Ohm DCR T/R