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G3R45MT17DG3R™ Series

GeneSiC G3R45MT17D Silicon Carbide (SiC) MOSFET, 1700V, 61A, 45mΩ, TO-247-3

TO-247-3

Active

Drain-Source Voltage (Vdss): 1700V

Continuous Drain Current (Id) @ 25°C: 61A

Drain-Source On-State Resistance (Rds(on)) Typ: 45mΩ

Drain-Source On-State Resistance (Rds(on)) Max: 58mΩ

Wolfspeed C3M0065090J-TR 900V 65mOhm Silicon Carbide (SiC) MOSFET

TO-263-7

Not Recommended for New Designs (NRND)

Drain-Source Voltage (Vdss): 900V

Continuous Drain Current (Id) @ 25°C: 35A

Drain-Source On-State Resistance (RDS(on)): 65mOhm

Total Gate Charge (Qg): 51nC