Enclosures, Boxes, & Cases INNER PANEL
Power Field-Effect Transistor, 7A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
15.2m Straight ESD Static Grounding Clamp, 40mm Jaw Opening
Resistor; Wirewound; Res 0.5 Ohms; Pwr-Rtg50 W; Tol 1%; Lug; Alum Housed
Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Inductor Power Shielded Drum Core 0.44uH/0.5uH 30% 100KHz Ferrite 1.54A 0.042Ohm DCR 1212 T/R
Power Field-Effect Transistor, 11A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
Power Field-Effect Transistor, 9A I(D), 500V, 0.84ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220FM, 3 PIN
Rectifier Diode, Schottky, 1 Phase, 1 Element, 10A, 40V V(RRM), Silicon, TO-220AC, ROHS COMPLIANT, PLASTIC PACKAGE-2
