The R5016ANX is a TO-220-3 packaged N-Channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 50W and is RoHS compliant. The device features a drain to source voltage of 500V, a continuous drain current of 16A, and a drain to source resistance of 210mR. It also has a gate to source voltage of 30V and an input capacitance of 1.8nF.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Rohm R5016ANX technical specifications.
General
| Package/Case | TO-220-3 |
| Continuous Drain Current (ID) | 16A |
| Drain to Source Resistance | 210mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 55ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 500 |
| Packaging | Bulk |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 150ns |
| Turn-On Delay Time | 40ns |
Compliance
| RoHS | Compliant |
Datasheet
Rohm R5016ANX Datasheet
Download the complete datasheet for Rohm R5016ANX to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
