Rohm
R5016ANX
Power Field-Effect Transistor, 16A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220FM, 3 PIN
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Rohm R5016ANX technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
16A
Drain to Source Resistance
210mR
Drain to Source Voltage (Vdss)
500V
Fall Time
55ns
FET Type
1 N-Channel
Gate to Source Voltage (Vgs)
30V
Input Capacitance
1.8nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
50W
Mount
Through Hole
Number of Channels
1
Package Quantity
500
Packaging
Bulk
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
270mR
RoHS Compliant
Yes
Turn-Off Delay Time
150ns
Turn-On Delay Time
40ns
Compliance
RoHS
Compliant
Datasheet
Rohm R5016ANX Datasheet
Download the complete datasheet for Rohm R5016ANX to view detailed technical specifications.
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