Inductor Power Shielded Wirewound 22.09uH/22uH 20% 100KHz 1.12A 0.2053Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 32.49uH/33uH 20% 100KHz 0.913A 0.31Ohm DCR 2020 T/R
Small Signal Field-Effect Transistor, 0.05A I(D), 10V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-206AF, TO-72, 3 PIN
Inductor Power Shielded Wirewound 9.61uH/10uH 20% 100KHz 1.53A 0.11Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 1.21uH/1.2uH 20% 100KHz 3.07A 0.0275Ohm DCR 2020 T/R
Inductor Power Shielded Wirewound 681.2uH/680uH 20% 100KHz 0.216A 5.56Ohm DCR 2020 T/R