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Phototransistor IR Chip Silicon 870nm 2-Pin T-1 3/4

Not Recommended for New Design

Collector Emitter Breakdown Voltage: 70V

Lens Style: Domed

Max Collector Current: 50mA

Max Operating Temperature: 100°C

NPN Phototransistor, 70V, 50mA, 870nm, Through Hole

Volume Production

Package/Case: Radial

Collector Emitter Breakdown Voltage: 70V

Collector Emitter Saturation Voltage: 150mV

Collector Emitter Voltage (VCEO): 70V

NPN Phototransistor, 70V, 50mA, 870nm, Radial

Volume Production

Package/Case: Radial

Collector Emitter Breakdown Voltage: 70V

Collector Emitter Saturation Voltage: 150mV

Collector Emitter Voltage (VCEO): 70V