Insulated Gate Bipolar Transistor, 565A I(C), 1200V V(BR)CES, N-Channel, CASE D 57, SEMITRANS 3, 5 PIN
Insulated Gate Bipolar Transistor, 618A I(C), 1200V V(BR)CES, N-Channel, CASE D56, 7 PIN
IGBT, MODULE, 1.2KV, 616A; Transistor Polarity:NPN; DC Collector Current:616A; Collector Emitter Saturation Voltage Vce(on):1.8V; Power Dissipation Pd:-; Collector Emitter Voltage V(br)ceo:1.2kV; No. of Pins:5; Packaging:Each ;RoHS Compliant: Yes
IGBT, MODULE, 1.2KV, 618A
Power Field-Effect Transistor, 28A I(D), 1000V, 0.37ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
DC-DC Regulated Power Supply Module,
Analog Circuit
DC-DC Regulated Power Supply Module
