
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4
DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-219AB, ROHS COMPLIANT, PLASTIC, SMF, 2 PIN, Transient Suppressor

Zener Diode, 5.1V V(Z), 5.88%, 1W, Silicon, Unidirectional, DO-213AB, HALOGEN FREE AND ROHS COMPLIANT, GLASS, MELF-2