The JAN2N2857UB transistor from Semicoa features a maximum operating temperature of 200°C and a minimum operating temperature of -65°C. It is designed for surface mount applications and is RoHS compliant. The transistor has a collector base voltage of 30V, a collector emitter voltage of 15V, and an emitter base voltage of 3V. It can handle a power dissipation of 200mW.
MountingSurface Mount
PolarityNPN
Power200mW
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Technical Specifications
Semicoa JAN2N2857UB technical specifications.
General
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Voltage (VCEO) | 15V |
| Emitter Base Voltage (VEBO) | 3V |
| Max Operating Temperature | 200°C |
| Min Operating Temperature | -65°C |
| Mount | Surface Mount |
| Polarity | NPN |
| Power Dissipation | 200mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Semicoa JAN2N2857UB Datasheet
Download the complete datasheet for Semicoa JAN2N2857UB to view detailed technical specifications.
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