This N-channel super junction MOSFET is rated for 600 V drain-source voltage and 42 A continuous drain current. It uses a TO-247 package and a fast-recovery structure with 70 mΩ maximum on-resistance. The device specifies 272 W power dissipation, 807 mJ single-pulse avalanche energy, and a maximum junction temperature of 150 °C. Typical dynamic parameters include 4670 pF input capacitance, 106 nC total gate charge, and 170 ns reverse-recovery time.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the SemiHow HCA60R070F datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
SemiHow HCA60R070F technical specifications.
| Drain-Source Voltage | 600V |
| Continuous Drain Current | 42A |
| RDS(on) Typ | 61mΩ |
| RDS(on) Max | 70mΩ |
| Gate Threshold Voltage Min | 2.5V |
| Gate Threshold Voltage Max | 5V |
| Input Capacitance | 4670pF |
| Output Capacitance | 96pF |
| Reverse Transfer Capacitance | 3.5pF |
| Turn-On Delay Time | 78ns |
| Rise Time | 34ns |
| Turn-Off Delay Time | 351ns |
| Fall Time | 22ns |
| Total Gate Charge | 106nC |
| Gate-Source Charge | 20nC |
| Gate-Drain Charge | 31nC |
| Single Pulse Avalanche Energy | 807mJ |
| Reverse Recovery Time | 170ns |
| Power Dissipation | 272W |
| Junction Temperature Max | 150°C |
Download the complete datasheet for SemiHow HCA60R070F to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
