N-channel trench MOSFET provides a 100 V drain-source voltage rating and 100 A continuous drain current at 25 °C case temperature. The device has typical 6.5 mΩ on-resistance at 10 V gate drive and 30 A drain current. It is avalanche tested with a 560 mJ single-pulse avalanche energy rating and operates over a -55 °C to 175 °C junction and storage temperature range. The TO-247 package uses gate, drain, and source terminals and supports 167 W power dissipation at 25 °C case temperature.
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| Channel Type | N-Channel |
| Technology | Trench MOSFET |
| Drain-Source Voltage | 100V |
| Continuous Drain Current at 25 °C | 100A |
| Continuous Drain Current at 100 °C | 70A |
| Pulsed Drain Current | 350A |
| Gate-Source Voltage | ±25V |
| Typical On-Resistance | 6.5mΩ |
| Maximum On-Resistance | 8.2mΩ |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Typical Total Gate Charge | 110nC |
| Typical Input Capacitance | 4600pF |
| Typical Output Capacitance | 520pF |
| Typical Reverse Transfer Capacitance | 330pF |
| Single Pulsed Avalanche Energy | 560mJ |
| Power Dissipation at 25 °C | 167W |
| Junction-to-Case Thermal Resistance | 0.9°C/W |
| Operating and Storage Temperature Range | -55 to 175°C |
| Package | TO-247 |
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