This device is a single N-channel LV trench MOSFET in a TO-252A package. It is rated for 60 V drain-to-source voltage, 84 A drain current, and 60 W power dissipation. Typical on-resistance is 6.0 mΩ at 10 V gate drive, with a 7.2 mΩ maximum. The threshold voltage range is 2 to 4 V, the maximum junction temperature is 175 °C, and the device uses SGT technology.
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SemiHow HRD72N06K technical specifications.
| Polarity | Single-N |
| Type | Standard |
| Drain-Source Voltage (VDS) | 60V |
| Drain Current (ID) | 84A |
| RDS(on) @ 10 V Typ | 6.0mΩ |
| RDS(on) @ 10 V Max | 7.2mΩ |
| Gate Threshold Voltage Min | 2V |
| Gate Threshold Voltage Max | 4V |
| Input Capacitance (Ciss) | 1174pF |
| Output Capacitance (Coss) | 611pF |
| Reverse Transfer Capacitance (Crss) | 61pF |
| Turn-On Delay Time | 12ns |
| Rise Time | 27.5ns |
| Turn-Off Delay Time | 26ns |
| Fall Time | 10ns |
| Total Gate Charge (Qg) | 23nC |
| Gate-Source Charge (Qgs) | 3nC |
| Gate-Drain Charge (Qgd) | 6nC |
| Avalanche Energy (EAS) | 144mJ |
| Reverse Recovery Time (TRR) | 41ns |
| Power Dissipation (PD) | 60W |
| Built-in ESD | No |
| Max Junction Temperature | 175°C |
| Technology | SGT |
| Qualification | Standard |
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