This device is a 60 V N-channel trench MOSFET in a TO-220 package. It is rated for 180 A continuous drain current at 25 °C, 126 A at 100 °C, and 230 W power dissipation at 25 °C case temperature. The datasheet specifies 3.1 mΩ typical drain-source on-resistance at 10 V gate drive, 150 nC typical total gate charge, and 2300 mJ single-pulse avalanche energy. The operating junction and storage temperature range is -55 °C to 175 °C.
Checking distributor stock and pricing after the page loads.
SemiHow HRP39N06K technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current @ 25°C | 180A |
| Continuous Drain Current @ 100°C | 126A |
| Pulsed Drain Current | 630A |
| Gate-Source Voltage | ±25V |
| Single Pulsed Avalanche Energy | 2300mJ |
| Power Dissipation @ 25°C | 230W |
| Operating Junction Temperature Range | -55 to 175°C |
| Junction-to-Case Thermal Resistance | 0.65 max°C/W |
| Drain-Source On-Resistance | 3.1 typ, 3.9 maxmΩ |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Total Gate Charge | 150 typnC |
| Input Capacitance | 6000 typpF |
| Output Capacitance | 1100 typpF |
| Reverse Transfer Capacitance | 730 typpF |
| Reverse Recovery Time | 80 typns |
| Reverse Recovery Charge | 120 typnC |
