This device is a 60 V N-channel trench MOSFET in a TO-220 package. It is rated for 80 A continuous drain current at 25 °C case temperature and 56 A at 100 °C, with 280 A pulsed drain current capability. The MOSFET features 7 mΩ typical on-resistance at 10 V gate drive and 73 nC typical total gate charge. It supports 275 mJ single-pulse avalanche energy and operates over a junction and storage temperature range of -55 °C to 175 °C.
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SemiHow HRP85N06K technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current (Tc=25°C) | 80A |
| Continuous Drain Current (Tc=100°C) | 56A |
| Pulsed Drain Current | 280A |
| Gate-Source Voltage | ±25V |
| Single Pulse Avalanche Energy | 275mJ |
| Repetitive Avalanche Energy | 10mJ |
| Power Dissipation (Tc=25°C) | 110W |
| Operating and Storage Temperature Range | -55 to +175°C |
| Junction-to-Case Thermal Resistance | 1.4°C/W |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Static Drain-Source On-Resistance | 7 typ, 8.5 maxmΩ |
| Input Capacitance | 3900pF |
| Output Capacitance | 350pF |
| Reverse Transfer Capacitance | 310pF |
| Total Gate Charge | 73nC |
| Turn-On Delay Time | 40ns |
| Turn-Off Delay Time | 140ns |
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