This 60 V N-channel trench MOSFET is rated for 80 A continuous drain current at 25 °C and 280 A pulsed drain current. It provides a typical 5.6 mΩ on-resistance at VGS = 10 V and a typical total gate charge of 100 nC. The device supports avalanche operation with 415 mJ single-pulse energy and operates over a -55 °C to +175 °C junction temperature range. It is housed in a TO-220F package with 4.6 °C/W maximum junction-to-case thermal resistance and includes an integral body diode with 1.3 V maximum forward voltage at 30 A.
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SemiHow HRS70N06K technical specifications.
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 80 @ TC=25°CA |
| Continuous Drain Current | 56 @ TC=100°CA |
| Pulsed Drain Current | 280A |
| Gate-Source Voltage | ±25V |
| Single Pulse Avalanche Energy | 415mJ |
| Power Dissipation | 33W |
| Operating Junction Temperature Range | -55 to +175°C |
| Junction-to-Case Thermal Resistance | 4.6°C/W |
| Static Drain-Source On-Resistance | 5.6 typ, 7 maxmΩ |
| Gate Threshold Voltage | 2.2 to 3.8V |
| Input Capacitance | 4600pF |
| Total Gate Charge | 100 typnC |
| Turn-On Time | 60 typns |
| Turn-Off Delay Time | 150 typns |
| Source-Drain Diode Forward Voltage | 1.3 maxV |
| Reverse Recovery Time | 50 typns |
| Reverse Recovery Charge | 90 typnC |
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