The PC817XJJ000F is a single NPN transistor from Sharp with a collector-emitter voltage rating of 80V and a maximum collector current of 50mA. It has a saturation voltage of 200mV and a power dissipation of 200mW. The transistor is packaged in a PDIP and is rated for operation between -30°C and 100°C. It is suitable for use in through-hole mounting applications.
PackagePDIP
MountingThrough Hole
Power200mW
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Technical Specifications
Sharp PC817XJJ000F technical specifications.
General
| Package/Case | PDIP |
| Collector Emitter Saturation Voltage | 200mV |
| Collector Emitter Voltage (VCEO) | 80V |
| Current Transfer Ratio | 600% |
| Fall Time | 18000ns |
| Forward Current | 50mA |
| Input Type | DC |
| Max Collector Current | 50mA |
| Max Operating Temperature | 100°C |
| Min Operating Temperature | -30°C |
| Max Power Dissipation | 200mW |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2000 |
| Packaging | Sleeve |
| Power Dissipation | 200mW |
| Reverse Breakdown Voltage | 6V |
Compliance
| RoHS | Compliant |
Datasheet
Sharp PC817XJJ000F Datasheet
Download the complete datasheet for Sharp PC817XJJ000F to view detailed technical specifications.
No datasheet is available for this part.