This device is an N-channel power MOSFET rated for 60 V drain-source voltage and 42 A continuous drain current. It uses an isolated FTO-220AG package and is specified for 10 V gate drive operation with low on-resistance. Maximum total power dissipation is 40 W, and the junction temperature rating is 150 °C. The datasheet lists 8.4 mΩ maximum static drain-source on-state resistance, 47 nC total gate charge, and 45 ns reverse recovery time. The terminal finish is lead-free and the part is marked RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Shindengen P42F6EN datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Shindengen P42F6EN technical specifications.
| Transistor Type | N-channel Power MOSFET |
| Drain-Source Voltage | 60V |
| Continuous Drain Current | 42A |
| Pulsed Drain Current | 168A |
| Gate-Source Voltage | ±20V |
| Power Dissipation | 40W |
| Channel Temperature | 150°C |
| Storage Temperature | -55 to 150°C |
| Package Type | FTO-220AG |
| JEITA Package Code | SC-91 |
| Drain-Source On-Resistance Max | 0.0084Ω |
| Gate Threshold Voltage | 2 to 4V |
| Total Gate Charge | 47nC |
| Input Capacitance | 2540pF |
| Output Capacitance | 350pF |
| Reverse Transfer Capacitance | 170pF |
| Thermal Resistance Junction-to-Case | 3.12°C/W |
| Turn-On Delay Time | 11ns |
| Rise Time | 22ns |
| Turn-Off Delay Time | 21ns |
| Fall Time | 4ns |
| Reverse Recovery Time | 45ns |
| Reverse Recovery Charge | 71nC |
| RoHS | Yes |
| RoHS | Yes |
| Lead Free | Pb free terminal |
Download the complete datasheet for Shindengen P42F6EN to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
