P60B6EL

This N-channel power MOSFET is rated for 60 V drain-source voltage and 60 A continuous drain current. It is housed in a TO-252AA surface-mount package and supports 4.5 V gate drive with 6.1 mΩ typical on-resistance at VGS = 10 V. The device has 55 nC typical total gate charge, 2920 pF typical input capacitance, and 2 °C/W junction-to-case thermal resistance. Maximum channel temperature is 150 °C, and the part is specified with Pb-free terminals and RoHS compliance.