Isolated gate driver with 4A maximum output current, featuring a 1.2A high-level output current and 500mA low-level output current. This single-channel driver offers a 50ns propagation delay and 28ns pulse width distortion, operating from a 5V to 30V supply voltage. Designed for demanding applications, it boasts a 125°C maximum operating temperature and is AEC-Q100 qualified. The component is housed in a 2.05mm height, 4.58mm length, 11.5mm width SDIP package, with a 75mW power dissipation.
PackageSDIP
Current2mA
Power75mW
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Technical Specifications
Silicon Labs Si8261BBD-C-IS technical specifications.
General
| Package/Case | SDIP |
| Height | 2.05mm |
| High Level Output Current | 1.2A |
| Length | 4.58mm |
| Low Level Output Current | 500mA |
| Max Operating Temperature | 125°C |
| Min Operating Temperature | -40°C |
| Max Output Current | 4A |
| Max Power Dissipation | 300mW |
| Max Supply Voltage | 30V |
| Min Supply Voltage | 5V |
| Number of Channels | 1 |
| Number of Drivers | 1 |
| Number of Outputs | 1 |
| Package Quantity | 96 |
| Packaging | Rail/Tube |
| Power Dissipation | 75mW |
| Propagation Delay | 50ns |
| Pulse Width Distortion (PWD) | 28ns |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q100 |
| Supply Current | 2mA |
| Turn-On Delay Time | 60ns |
| Width | 11.5mm |
Compliance
| RoHS | Compliant |
Datasheet
Silicon Labs Si8261BBD-C-IS Datasheet
Download the complete datasheet for Silicon Labs Si8261BBD-C-IS to view detailed technical specifications.
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