Isolated gate driver with 4A maximum output current, featuring a 1.2A high-level output current and 500mA low-level output current. This single-channel driver offers a 50ns propagation delay and 28ns pulse width distortion, operating from a 5V to 30V supply voltage. Designed for demanding applications, it boasts a 125°C maximum operating temperature and is AEC-Q100 qualified. The component is housed in a 2.05mm height, 4.58mm length, 11.5mm width SDIP package, with a 75mW power dissipation.
PackageSDIP
Current2mA
Power75mW
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Technical Specifications
Silicon Labs Si8261BBD-C-IS technical specifications.
General
Package/Case
SDIP
Height
2.05mm
High Level Output Current
1.2A
Length
4.58mm
Low Level Output Current
500mA
Max Operating Temperature
125°C
Min Operating Temperature
-40°C
Max Output Current
4A
Max Power Dissipation
300mW
Max Supply Voltage
30V
Min Supply Voltage
5V
Number of Channels
1
Number of Drivers
1
Number of Outputs
1
Package Quantity
96
Packaging
Rail/Tube
Power Dissipation
75mW
Propagation Delay
50ns
Pulse Width Distortion (PWD)
28ns
Reach SVHC Compliant
Unknown
RoHS Compliant
Yes
Series
Automotive, AEC-Q100
Supply Current
2mA
Turn-On Delay Time
60ns
Width
11.5mm
Compliance
RoHS
Compliant
Datasheet
Silicon Labs Si8261BBD-C-IS Datasheet
Download the complete datasheet for Silicon Labs Si8261BBD-C-IS to view detailed technical specifications.
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